Project leader: prof. Dragan Mihailović,
Duration: 01.10.2021 – 30.09.2024, ARRS (J7-3146)
The focus of the project is to design, construct, demonstrate and characterize the operation of a new type of a quantum memory device targeted for application in cryogenic controllers and error-correction circuits in quantum computers. It is based on a patented, award-winning hybrid device called a parallelotron (pTron), comprising a non-volatile ultra-efficient charge configuration memory (CCM) memristive element and a superconducting nanocryotron (nTron) driver in parallel to the CCM. The purpose of the nTron driver is to allow the CCM device to be triggered and controlled by one or a few flux-quantum-level signal outputs from superconducting flux quantum (SFQ) circuits. The experimental research program is designed to follow theoretical predictions and will include everything from nanofabrication of superconducting NbTiN nanowire nTrons, TaS2-based CCMs and hybrid pTron devices.
The goal of the project is to understand the basic physics of operation, optimize fabrication techniques and design parameters, present systematic measurements of performance and finally, to produce a demonstration chip that can be used to evaluate the pTron device in cryocumputing applications.
The project is highly multidisciplinary and includes many different disciplines that need to work in close synergy: science on materials for the growth of thin epitaxial films and techniques of epitaxies with molecular rays, fabrication of devices requiring state-of-the-art lithographic techniques on LMN / PSI; characterization of devices requiring Ultrafast Science Laboratory and state-of-the-art ultra-low temperature devices, design and integration of devices into SFQ circuits and theoretical modeling of device and circuit operation.
The project will contribute knowledge relevant to long-term societal benefits (memories for processing larger amounts of data, faster data processing, more secure data storage, encryption, and solving optimization challenges.