A recently published study in Nature Communications (2025), featured by the Paul Scherrer Institute (PSI), brings new understanding of how next-generation memory devices operate at cryogenic temperatures.
The research focuses on the layered material 1T-TaS₂ and shows how electrical signals can control the stacking of atomic layers. By combining electrical measurements with advanced X-ray imaging, the team was able to observe switching processes directly at the nanoscale.
Unlike conventional memory devices, where switching typically occurs through localized conductive channels, this study reveals a collective structural transformation across the material. This mechanism enables stable and energy-efficient operation, which is particularly relevant for quantum technologies.
Contribution (Nanocenter):
The study is part of an international collaboration and includes contributions from researchers at the Nanocenter.
Reference:
Imaging of electrically controlled van der Waals layer stacking in 1T-TaS₂,
Nature Communications (2025), DOI: 10.1038/s41467-025-65212-1
Read the PSI highlight: https://www.psi.ch/lxn/scientific-highlights/imaging-electrical-switching-of-van-der-waals-cryomemory-devices
Link to video: https://youtu.be/3lkjHHj8UY0